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Infineon Technologies BSP315PH6327XTSA1
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BSP315PH6327XTSA1
Manufacturers: Infineon Technologies
Qty: 17336
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Description: MOSFET SIPMOS Sm-Signal 800mOhm -60V -1.17A
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:- 1.17 A
Rds On - Drain-Source Resistance:500 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:- 1.5 V
Qg - Gate Charge:5.2 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.8 W
Mounting Style:SMD/SMT
Package / Case:SOT-223-3
Packaging:Reel
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