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Infineon Technologies BSS209PWH6327XTSA1
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BSS209PWH6327XTSA1
Manufacturers: Infineon Technologies
Qty: 8586
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Description: MOSFET P-CHANNEL MOS
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:12 V
Id - Continuous Drain Current:- 630 mA
Rds On - Drain-Source Resistance:581 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:- 0.9 V
Qg - Gate Charge:- 1 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:300 mW
Mounting Style:SMD/SMT
Package / Case:SOT-323-3
Packaging:Reel
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