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Infineon Technologies BSS306NH6327XT
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BSS306NH6327XT
Manufacturers: Infineon Technologies
Qty: 1413
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Description: MOSFET OptiMOS 2 Small Signal Transistor
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:2.3 A
Rds On - Drain-Source Resistance:57 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:1.5 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:500 mW
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Packaging:Reel
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