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Infineon Technologies BTS112A
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BTS112A
Manufacturers: Infineon Technologies
Qty: 202
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Description: MOSFET N-Channel 60V TEMPFET
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Product Information:
RoHS:No
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:6.7 A
Rds On - Drain-Source Resistance:150 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:40 W
Mounting Style:Through Hole
Package / Case:TO-220-3
Packaging:Tube
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