【CSD16570Q5BT】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > N/A (CSD16570Q5BT)

PartNo:	CSD16570Q5BT
Manufacturers:	N/A
Qty:	135
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Description:	MOSFET 25V NCH NexFET Pwr MOSFET
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	456 A
Rds On - Drain-Source Resistance:	0.59 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	192 nC
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	195 W
Mounting Style:	SMD/SMT
Package / Case:	VSON-8
Packaging:	Reel

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