【DMG2305UX-13】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Diodes Incorporated (DMG2305UX-13)

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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 20 V
Vgs - Gate-Source Breakdown Voltage:	8 V
Id - Continuous Drain Current:	- 4.2 A
Rds On - Drain-Source Resistance:	52 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	- 0.9 V
Qg - Gate Charge:	10.2 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.4 W
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Packaging:	Reel

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