【FDN302P】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Fairchild Semiconductor (FDN302P)

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Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 20 V
Vgs - Gate-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	2.4 A
Rds On - Drain-Source Resistance:	55 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Mounting Style:	SMD/SMT
Package / Case:	SSOT-3
Packaging:	Reel

IGBT 600V 30A PFC

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IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

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