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Discrete Semiconductors
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IGBT
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Fairchild Semiconductor (FDP036N10A)
PartNo:
FDP036N10A
Manufacturers:
Fairchild Semiconductor
Qty:
1408
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Description:
MOSFET PT5 NCH 100V 3.6Mohm PowerTrench MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
176 A
Rds On - Drain-Source Resistance:
3.6 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
89 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
227 W
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Packaging:
Tube
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IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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