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Discrete Semiconductors
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IGBT
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Fairchild Semiconductor (FQU4N50TU_WS)
PartNo:
FQU4N50TU_WS
Manufacturers:
Fairchild Semiconductor
Qty:
5035
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Description:
MOSFET N-CH/500V 2.6A/2.7OHM
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
500 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
2.6 A
Rds On - Drain-Source Resistance:
2.7 Ohms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Packaging:
Tube
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