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Infineon Technologies IHW30N160R2
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IHW30N160R2
Manufacturers: Infineon Technologies
Qty: 1012
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Description: IGBT Transistors RC-IGBT MONO DIODE 1600V 30A
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Product Information:
RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:1.6 kV
Collector-Emitter Saturation Voltage:2.35 V
Maximum Gate Emitter Voltage:+/- 25 V
Continuous Collector Current at 25 C:
Gate-Emitter Leakage Current:
Power Dissipation:312 W
Maximum Operating Temperature:+ 150 C
Package / Case:TO-247-3
Packaging:Tube
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