【IPA65R190CFD】PDF/Datasheet/Manufacturers,electronics components distributor

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PartNo:	IPA65R190CFD
Manufacturers:	Infineon Technologies
Qty:	470
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Description:	MOSFET CoolMOS 650V 190mOhm CFD2 N-Chan MOSFET
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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	17.5 A
Rds On - Drain-Source Resistance:	190 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	68 nC
Maximum Operating Temperature:
Pd - Power Dissipation:	34 W
Mounting Style:	Through Hole
Package / Case:	TO-220FP-3
Packaging:	Tube

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