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Discrete Semiconductors
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IGBT
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Infineon Technologies (IPB65R310CFD)
PartNo:
IPB65R310CFD
Manufacturers:
Infineon Technologies
Qty:
520
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Description:
MOSFET CoolMOS 650V 310mOhm CFD2 N-Chan MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
11.4 A
Rds On - Drain-Source Resistance:
310 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
41 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
104.2 W
Mounting Style:
SMD/SMT
Package / Case:
D2PAK-2
Packaging:
Reel
SLA5222
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RJH60F5DPK-00#T0
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IKW08T120
IGBT 1200V 16A 70W TO247-3
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