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Infineon Technologies IPB80N04S2-H4
PartNo:

IPB80N04S2-H4
Manufacturers: Infineon Technologies
Qty: 2744
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Description: MOSFET OptiMOS PWR TRANST 40V 80A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:80 A
Rds On - Drain-Source Resistance:3.7 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:300 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Reel
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