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Infineon Technologies IPD100N04S4-02
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IPD100N04S4-02
Manufacturers: Infineon Technologies
Qty: 1729
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Description: MOSFET N-Channel 40V MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:100 A
Rds On - Drain-Source Resistance:1.7 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:91 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:150 W
Mounting Style:SMD/SMT
Package / Case:DPAK-2
Packaging:Reel
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