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Infineon Technologies IPP60R280E6
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IPP60R280E6
Manufacturers: Infineon Technologies
Qty: 252
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Description: MOSFET N-CH 650V 13.8A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:650 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:13.8 A
Rds On - Drain-Source Resistance:250 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:104 W
Mounting Style:Through Hole
Package / Case:TO-220-3
Packaging:Tube
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