Home
Tel: 86-755-83295289 Email:
Product Detail
 All Product > Discrete Semiconductors > IGBT > Infineon Technologies  (IPW50R190CEFKSA1)
Infineon Technologies IPW50R190CEFKSA1
PartNo:

IPW50R190CEFKSA1
Manufacturers: Infineon Technologies
Qty: 402
Request Qty:   
Description: MOSFET COOL MOS
PDF:
Quick Quotation
Company Name:* Contact Name:*  
Email:* Tel:*
Request Qty:* Verification Code:*

Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:550 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:63 A
Rds On - Drain-Source Resistance:190 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:47.2 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:127 W
Mounting Style:Through Hole
Package / Case:TO-247-3
Packaging:Tube
SLA5222
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IKW08T120
IGBT 1200V 16A 70W TO247-3
IPW50R190CEFKSA1 Related Product
  • Electronic Components Distributor
    Since 2000
  • ©2001 - 2015  www.cxda.com all rights reservied.
  • Electronic Components Supplier  | 
  • China Electronic Components Manufacturer  | 
  • Electronic Components Distributor