【IRFD120】PDF/Datasheet/Manufacturers,electronics components distributor

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All Product > Discrete Semiconductors > IGBT > Vishay / Siliconix (IRFD120)

PartNo:	IRFD120
Manufacturers:	Vishay / Siliconix
Qty:	2186
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Description:	MOSFET 100V Single N-Channel HEXFET
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Product Information:

RoHS:	No
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	1.3 A
Rds On - Drain-Source Resistance:	270 mOhms
Configuration:	Single Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.3 W
Mounting Style:	Through Hole
Package / Case:	HexDIP-4
Packaging:	Tube

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