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IXYS IXFH69N30P
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IXFH69N30P
Manufacturers: IXYS
Qty: 46
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Description: MOSFET 69 Amps 300V 0.049 Rds
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:300 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:69 A
Rds On - Drain-Source Resistance:49 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:5 V
Qg - Gate Charge:156 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:500 W
Mounting Style:Through Hole
Package / Case:TO-247-3
Packaging:Tube
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