【IXFN210N20P】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	188 A
Rds On - Drain-Source Resistance:	10.5 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.07 kW
Mounting Style:	SMD/SMT
Package / Case:	SOT-227B-4
Packaging:	Tube

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