【IXFX26N120P】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Vgs - Gate-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	500 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	6.5 V
Qg - Gate Charge:	255 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	960 W
Mounting Style:	Through Hole
Package / Case:	PLUS 247-3
Packaging:	Tube

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