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IXYS IXTF1N250
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IXTF1N250
Manufacturers: IXYS
Qty: 40
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Description: MOSFET 2500V 1A HV Power MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:2.5 kV
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:1 A
Rds On - Drain-Source Resistance:40 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2 V to 4 V
Qg - Gate Charge:41 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:110 W
Mounting Style:Through Hole
Package / Case:ISOPLUS i4-PAK-3
Packaging:Tube
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