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IXYS IXTJ4N150
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IXTJ4N150
Manufacturers: IXYS
Qty: 38
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Description: MOSFET High Voltage Power MOSFET
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Product Information:
RoHS:
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:1.5 kV
Vgs - Gate-Source Breakdown Voltage:30 V
Id - Continuous Drain Current:2.5 A
Rds On - Drain-Source Resistance:6 Ohms
Configuration:
Vgs th - Gate-Source Threshold Voltage:5 V
Qg - Gate Charge:44.5 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:110 W
Mounting Style:Through Hole
Package / Case:ISO TO-247-3
Packaging:Tube
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