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IXYS IXTN22N100L
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IXTN22N100L
Manufacturers: IXYS
Qty: 39
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Description: MOSFET 22 Amps 1000V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:1 kV
Vgs - Gate-Source Breakdown Voltage:30 V
Id - Continuous Drain Current:22 A
Rds On - Drain-Source Resistance:600 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:5 V
Qg - Gate Charge:270 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:700 W
Mounting Style:SMD/SMT
Package / Case:SOT-227B-4
Packaging:Tube
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