【IXTQ30N60L2】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	240 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	335 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	540 W
Mounting Style:	Through Hole
Package / Case:	TO-3P-3
Packaging:	Tube

IGBT 600V 30A PFC

IGBT 600V 80A 260.4W TO-3P

IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

IGBT 1200V 16A 70W TO247-3

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