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All Product >
Discrete Semiconductors
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IGBT
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ON Semiconductor (MCH3475-TL-E)
PartNo:
MCH3475-TL-E
Manufacturers:
ON Semiconductor
Qty:
5195
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Description:
MOSFET LOW-NOISE AMPLIFIER
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
53 A
Rds On - Drain-Source Resistance:
180 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
2 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
800 mW
Mounting Style:
SMD/SMT
Package / Case:
MCPH-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
MCH3475-TL-E Related Product
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MCH3431-G-TL-E
MCH3406-S-TL-E
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MCH3409
MCH3474-TL-E
MCH3431-TL-E
MCH3431-G-TL-E
MCH3406-S-TL-E
MCH3333-TL-E
MCH3211-TL-E
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