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ON Semiconductor NTJD4105CT2G
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NTJD4105CT2G
Manufacturers: ON Semiconductor
Qty: 5738
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Description: MOSFET 20V/-8V 0.63A/-.775A Complementary
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:27 V, - 10.5 V
Vgs - Gate-Source Breakdown Voltage:12 V, 8 V
Id - Continuous Drain Current:630 mA, - 775 mA
Rds On - Drain-Source Resistance:290 mOhms, 220 mOhms
Configuration:Complementary
Vgs th - Gate-Source Threshold Voltage:0.92 V, - 0.83 V
Qg - Gate Charge:1.3 nC, 2.2 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:270 mW
Mounting Style:SMD/SMT
Package / Case:SOT-363-6
Packaging:Reel
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