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ON Semiconductor NTJD4158CT1G
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NTJD4158CT1G
Manufacturers: ON Semiconductor
Qty: 14420
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Description: MOSFET PFET 20V .88A 1OHM
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:30 V, - 20 V
Vgs - Gate-Source Breakdown Voltage:20 V, 12 V
Id - Continuous Drain Current:250 mA
Rds On - Drain-Source Resistance:1 Ohms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:0.9 nC, 2.2 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:270 mW
Mounting Style:SMD/SMT
Package / Case:SC-70-6
Packaging:Reel
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