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ON Semiconductor NTLJD3115PT1G
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NTLJD3115PT1G
Manufacturers: ON Semiconductor
Qty: 573
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Description: MOSFET PFET 2X2 20V 4.1A 106MOHM
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:3.3 A
Rds On - Drain-Source Resistance:106 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.5 W
Mounting Style:SMD/SMT
Package / Case:DFN2020-6
Packaging:Reel
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