【NTMD3P03R2G】PDF/Datasheet/Manufacturers,electronics components distributor

Product Detail

All Product > Discrete Semiconductors > IGBT > ON Semiconductor (NTMD3P03R2G)

Quick Quotation

Product Information:

RoHS:	Details
Transistor Polarity:	P-Channel
Vds - Drain-Source Breakdown Voltage:	- 30 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	- 3.05 A
Rds On - Drain-Source Resistance:	85 mOhms
Configuration:	Dual Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Mounting Style:	SMD/SMT
Package / Case:	SOIC-8 Narrow
Packaging:	Reel

IGBT 600V 30A PFC

IGBT 600V 80A 260.4W TO-3P

IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

IGBT 1200V 16A 70W TO247-3