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Discrete Semiconductors
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IGBT
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ON Semiconductor (NVLJD4007NZTAG)
PartNo:
NVLJD4007NZTAG
Manufacturers:
ON Semiconductor
Qty:
2475
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Description:
MOSFET NFET WDFN6 30V 1.4 Ohms
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
10 V
Id - Continuous Drain Current:
245 mA
Rds On - Drain-Source Resistance:
1.4 Ohms
Configuration:
Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
0.75 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
755 mW
Mounting Style:
SMD/SMT
Package / Case:
WDFN-6
Packaging:
Reel
SLA5222
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
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IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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