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NXP Semiconductors PSMN1R9-40PLQ
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PSMN1R9-40PLQ
Manufacturers: NXP Semiconductors
Qty: 4993
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Description: MOSFET N-channel 40 V 1.7 mOhm MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:150 A
Rds On - Drain-Source Resistance:1.4 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:1.7 V
Qg - Gate Charge:230 nC
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:349 W
Mounting Style:Through Hole
Package / Case:TO-220AB-3
Packaging:Tube
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