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ROHM Semiconductor RQ3E180GNTB
PartNo:

RQ3E180GNTB
Manufacturers: ROHM Semiconductor
Qty: 3000
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Description: MOSFET 4.5V Drive Nch MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:18 A
Rds On - Drain-Source Resistance:4.3 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2.5 V
Qg - Gate Charge:22.4 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2 W
Mounting Style:SMD/SMT
Package / Case:HSMT-8
Packaging:Reel
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