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All Product >
Discrete Semiconductors
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IGBT
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ROHM Semiconductor (RW1A013ZPT2R)
PartNo:
RW1A013ZPT2R
Manufacturers:
ROHM Semiconductor
Qty:
11633
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Description:
MOSFET
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 12 V
Vgs - Gate-Source Breakdown Voltage:
10 V
Id - Continuous Drain Current:
1.5 A
Rds On - Drain-Source Resistance:
190 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
700 mW
Mounting Style:
SMD/SMT
Package / Case:
WEMT-6
Packaging:
Reel
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
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IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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RW1A013ZPT2R
RW1A030APT2CR
RW1A013ZPT2R
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