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Vishay / Siliconix SI2336DS-T1-GE3
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SI2336DS-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 4975
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Description: MOSFET 30V 107A N-CH MOSFET
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:5.2 A
Rds On - Drain-Source Resistance:42 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:5.7 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.8 W
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Packaging:Reel
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