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Vishay / Siliconix SI4396DY-T1-E3
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SI4396DY-T1-E3
Manufacturers: Vishay / Siliconix
Qty: 4901
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Description: MOSFET 30V 16A 5.4W 11.5mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:12.3 A
Rds On - Drain-Source Resistance:11.5 mOhms
Configuration:Single with Schottky Diode
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:3.1 W
Mounting Style:SMD/SMT
Package / Case:SOIC-8 Narrow
Packaging:Reel
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