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Vishay / Siliconix SI4448DY-T1-E3
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SI4448DY-T1-E3
Manufacturers: Vishay / Siliconix
Qty: 2500
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Description: MOSFET 12V 50A 7.8W 1.7mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:12 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:32 A
Rds On - Drain-Source Resistance:17 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:3.5 W
Mounting Style:SMD/SMT
Package / Case:SOIC-8 Narrow
Packaging:Reel
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