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Vishay / Siliconix SI4500BDY-T1-GE3
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SI4500BDY-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2372
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Description: MOSFET 20V 9.1/5.3A 2.5W 20/60mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:20 V
Vgs - Gate-Source Breakdown Voltage:12 V
Id - Continuous Drain Current:6.6 A
Rds On - Drain-Source Resistance:16 mOhms, 48 mOhms
Configuration:Half-Bridge
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.3 W
Mounting Style:SMD/SMT
Package / Case:SOIC-8 Narrow
Packaging:Reel
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