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Vishay / Siliconix SI4943CDY-T1-GE3
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SI4943CDY-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2489
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Description: MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 20 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:8 A
Rds On - Drain-Source Resistance:19.2 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2 W
Mounting Style:SMD/SMT
Package / Case:SOIC-8 Narrow
Packaging:Reel
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