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Vishay / Siliconix SI5406CDC-T1-GE3
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SI5406CDC-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 4944
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Description: MOSFET 12V 6.0A 5.7W 20mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:12 V
Vgs - Gate-Source Breakdown Voltage:8 V
Id - Continuous Drain Current:6 A
Rds On - Drain-Source Resistance:20 mOhms
Configuration:Single Hex Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2.3 W
Mounting Style:SMD/SMT
Package / Case:1206-8 ChipFET
Packaging:Reel
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