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Vishay / Siliconix SI7802DN-T1-GE3
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SI7802DN-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 441
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Description: MOSFET 250V 1.95A 3.8W 435mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:250 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:1.24 A
Rds On - Drain-Source Resistance:435 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.5 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK 1212-8
Packaging:Reel
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