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Vishay / Siliconix SI8429DB-T1-E1
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SI8429DB-T1-E1
Manufacturers: Vishay / Siliconix
Qty: 5526
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Description: MOSFET 8.0V 11.7A 6.25W 35mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:P-Channel
Vds - Drain-Source Breakdown Voltage:- 8 V
Vgs - Gate-Source Breakdown Voltage:5 V
Id - Continuous Drain Current:- 7.8 A
Rds On - Drain-Source Resistance:43 mOhms
Configuration:Single Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:21 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:2.77 W
Mounting Style:SMD/SMT
Package / Case:Micro Foot-4 1.6x1.6
Packaging:Reel
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