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Vishay / Siliconix SIR424DP-T1-GE3
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SIR424DP-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 5459
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Description: MOSFET 20V 5.5mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:20 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:30 A
Rds On - Drain-Source Resistance:4.6 mOhms
Configuration:Single Quad Drain Triple Source
Vgs th - Gate-Source Threshold Voltage:2.5 V
Qg - Gate Charge:22 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:4.8 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SO-8
Packaging:Reel
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