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Vishay / Siliconix SIR836DP-T1-GE3
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SIR836DP-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 2304
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Description: MOSFET 40 Volts 21 Amps 15.6 Watts
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:21 A
Rds On - Drain-Source Resistance:19 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:15.6 W
Mounting Style:SMD/SMT
Package / Case:PowerPAK SO-8
Packaging:Reel
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