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Vishay / Siliconix SIZ916DT-T1-GE3
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SIZ916DT-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 5500
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Description: MOSFET 30V 1.3mOhm@10V 40A N-Ch G-IV
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:16 A
Rds On - Drain-Source Resistance:1.3 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:2.4 V
Qg - Gate Charge:7.2 nC, 45 nC
Maximum Operating Temperature:
Pd - Power Dissipation:22.7 W, 100 W
Mounting Style:SMD/SMT
Package / Case:PowerPAIR-8 6x5
Packaging:Reel
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