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All Product >
Discrete Semiconductors
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IGBT
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Infineon Technologies (SPA17N80C3)
PartNo:
SPA17N80C3
Manufacturers:
Infineon Technologies
Qty:
488
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Description:
MOSFET COOL MOS PWR TRANS 800V 17A
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
17 A
Rds On - Drain-Source Resistance:
290 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
42 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
Tube
SLA5222
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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