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Discrete Semiconductors
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IGBT
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Infineon Technologies (SPA20N60C3)
PartNo:
SPA20N60C3
Manufacturers:
Infineon Technologies
Qty:
517
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Description:
MOSFET COOL MOS N-CH 600V 20.7A
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
20.7 A
Rds On - Drain-Source Resistance:
190 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
34.5 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
Tube
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