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Infineon Technologies SPP12N50C3XKSA1
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SPP12N50C3XKSA1
Manufacturers: Infineon Technologies
Qty: 398
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Description: MOSFET LOW POWER_PRICE/PERFORM
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:560 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:11.6 A
Rds On - Drain-Source Resistance:380 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:49 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:125 W
Mounting Style:Through Hole
Package / Case:TO-220-3
Packaging:Tube
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