【STB33N60M2】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Breakdown Voltage:	+/- 25 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	125 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	45.5 nC
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Mounting Style:	SMD/SMT
Package / Case:	D2PAK
Packaging:

IGBT 600V 30A PFC

IGBT 600V 80A 260.4W TO-3P

IGBT 1000V 34A 150W TO247AD

IGBT 600V 107A 366W TO247

IGBT 1200V 16A 70W TO247-3

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