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Discrete Semiconductors
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IGBT
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STMicroelectronics (STD18N65M5)
PartNo:
STD18N65M5
Manufacturers:
STMicroelectronics
Qty:
5591
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Description:
MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
15 A
Rds On - Drain-Source Resistance:
198 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
31 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
110 W
Mounting Style:
SMD/SMT
Package / Case:
DPAK-2
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
STD18N65M5 Related Product
STD1109T-470M-B-C
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STD17N05T4
STD1703LT4MOSFETIGBTIC
STD11NM60N
STD12NF06
STD12N06
STD1LNC60
STD1NB50-1
STD1NB52
STD10NF06
STD12NE06L
STD17NF03T4
STD100NH03L
STD12N10L-TR
STD11NM50NMOSFETIGBTIC
STD1NK80Z
STD17NF03LT4SH1
STD10NF30
STD1805T4
STD10PF06L
STD17N05L
STD17NE03LT4
STD1LNK60Z
STD1048T4
STD1HNC60T4
STD100NH03LT4MOSFETIGBTIC
STD100N10F7MOSFETIGBTIC
STD150N02
STD1NB40
STD100NH02
STD15N06L
STD1NK80
STD11NM60
STD10PF06 D10PF06
STD10PF06 D10PF06
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