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STMicroelectronics STD6N60M2
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STD6N60M2
Manufacturers: STMicroelectronics
Qty: 5347
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Description: MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh II
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Vgs - Gate-Source Breakdown Voltage:25 V
Id - Continuous Drain Current:4.5 A
Rds On - Drain-Source Resistance:1.06 Ohms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:8 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:60 W
Mounting Style:SMD/SMT
Package / Case:DPAK-2
Packaging:Reel
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